Hoya Corporation establishes a venture company to produce a new semiconductor(3C-SiC)

Hoya Corporation has announced that it established a venture company to develop and produce cubic silicon carbide (3C-SiC) on May 21, 2002. Cubic silicon carbide is a promising, highly efficient semiconductor material. The name of the new company is HOYA ADVANCED SEMICONDUCTOR TECHNOLOGIES (Capital: 350 million yen, Head Office: Akishima-City, Tokyo, CEO: Mr. Fumio Kitahara).

The new company has exclusive rights to the use of technologies and patents for SiC developed by Hoya Corporation. The technological features and patent developed by Hoya Corporation govern the manufacture of large-area 3C-SiC substrates at high growth rates, while decreasing crystal defects that degrade performance.

The new company will employ engineers and researchers from Hoya Corporation and seek external mid-career recruits. Dr. Hiroyuki Nagasawa will be inaugurated as the CTO, based on his achievements in developing 3C-SiC. Dr. Masayuki Abe (IEEE Fellow) will be the inaugural Director of the Development Center of the new company.

The new company will promote alliances with companies or universities worldwide to expand the wide-band-gap semiconductor market as quickly as possible. The company will introduce its original management system, including a stock option system, to recruit talented people. The total investment in plant and equipment will be 2.6 billion yen. Annual revenues are expected to reach 4 billion yen by FY2007, when the initial public stock offer will be made.